INSITU ARSENIC DOPING OF EPITAXIAL SILICON AT 800-DEGREES-C BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：16

作者：

COMFORT, JH

REIF, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 19期

关键词：

D O I：

10.1063/1.98627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1536 / 1538

页数：3

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