BULK-QUALITY BIPOLAR-TRANSISTORS FABRICATED IN LOW-TEMPERATURE (TDEP=800-DEGREES-C) EPITAXIAL SILICON

被引：13

作者：

BURGER, WR

REIF, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 20期

关键词：

D O I：

10.1063/1.97850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1447 / 1449

页数：3

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