BIPOLAR-TRANSISTOR FABRICATION IN LOW-TEMPERATURE (745-DEGREES-C) ULTRA-LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED EPITAXIAL SILICON

被引：20

作者：

BURGER, WR

COMFORT, JH

GARVERICK, LM

YEW, TR

REIF, R

机构：

[1] MIT,DEPT CHEM ENGN,CAMBRIDGE,MA 02139

[2] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 04期

关键词：

D O I：

10.1109/EDL.1987.26590

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：168 / 170

页数：3

相关论文

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