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THE REDUCTION OF EMITTER-COLLECTOR SHORTS IN A HIGH-SPEED ALL-IMPLANTED BIPOLAR TECHNOLOGY
被引:16
作者
:
PARRILLO, LC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
PARRILLO, LC
[
1
]
PAYNE, RS
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
PAYNE, RS
[
1
]
SEIDEL, TE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
SEIDEL, TE
[
1
]
ROBINSON, M
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
ROBINSON, M
[
1
]
REUTLINGER, GW
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
REUTLINGER, GW
[
1
]
POST, DE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
POST, DE
[
1
]
FIELD, RL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
FIELD, RL
[
1
]
机构
:
[1]
BELL TEL LABS INC, ALLENTOWN, PA 18103 USA
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1981年
/ 28卷
/ 12期
关键词
:
D O I
:
10.1109/T-ED.1981.20638
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1508 / 1514
页数:7
相关论文
共 17 条
[1]
DIFFUSION PIPES IN SILICON NPN STRUCTURES
BARSON, F
论文数:
0
引用数:
0
h-index:
0
BARSON, F
HESS, MS
论文数:
0
引用数:
0
h-index:
0
HESS, MS
ROY, MM
论文数:
0
引用数:
0
h-index:
0
ROY, MM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(02)
: 304
-
&
[2]
EMITTER-COLLECTOR SHORTS IN BIPOLAR-DEVICES
BARSON, F
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,E FISHKILL,NY 12533
IBM CORP,DIV SYST PROD,E FISHKILL,NY 12533
BARSON, F
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1976,
11
(04)
: 505
-
510
[3]
DRUM CM, 1970, FAL EL SOC M
[4]
QUANTIFIED CONDITIONS FOR EMITTER-MISFIT DISLOCATION FORMATION IN SILICON
FAIR, RB
论文数:
0
引用数:
0
h-index:
0
FAIR, RB
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(06)
: 923
-
926
[5]
STRAIN EFFECTS AROUND PLANAR DIFFUSED STRUCTURES
FAIRFIELD, JM
论文数:
0
引用数:
0
h-index:
0
FAIRFIELD, JM
SCHWUTTKE, GH
论文数:
0
引用数:
0
h-index:
0
SCHWUTTKE, GH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(04)
: 415
-
+
[6]
ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON
HU, SM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
HU, SM
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(04)
: 165
-
167
[7]
DIFFUDION-INDUCED STRESS AND LATTICE DISORDERS IN SILICON
LAWRENCE, JE
论文数:
0
引用数:
0
h-index:
0
LAWRENCE, JE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(08)
: 819
-
&
[8]
COST-SIZE OPTIMA OF MONOLITHIC INTEGRATED CIRCUITS
MURPHY, BT
论文数:
0
引用数:
0
h-index:
0
MURPHY, BT
[J].
PROCEEDINGS OF THE IEEE,
1964,
52
(12)
: 1537
-
&
[9]
DELETERIOUS EFFECTS OF AN OXIDIZING DRIVE-IN AMBIENT ON IMPLANTED ARSENIC EMITTERS IN (111) SILICON
PARRILLO, LC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
PARRILLO, LC
MORRIS, BL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
MORRIS, BL
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(04)
: 345
-
347
[10]
PARRILLO LC, 1977, IEDM135 PAP
←
1
2
→
共 17 条
[1]
DIFFUSION PIPES IN SILICON NPN STRUCTURES
BARSON, F
论文数:
0
引用数:
0
h-index:
0
BARSON, F
HESS, MS
论文数:
0
引用数:
0
h-index:
0
HESS, MS
ROY, MM
论文数:
0
引用数:
0
h-index:
0
ROY, MM
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(02)
: 304
-
&
[2]
EMITTER-COLLECTOR SHORTS IN BIPOLAR-DEVICES
BARSON, F
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,DIV SYST PROD,E FISHKILL,NY 12533
IBM CORP,DIV SYST PROD,E FISHKILL,NY 12533
BARSON, F
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1976,
11
(04)
: 505
-
510
[3]
DRUM CM, 1970, FAL EL SOC M
[4]
QUANTIFIED CONDITIONS FOR EMITTER-MISFIT DISLOCATION FORMATION IN SILICON
FAIR, RB
论文数:
0
引用数:
0
h-index:
0
FAIR, RB
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(06)
: 923
-
926
[5]
STRAIN EFFECTS AROUND PLANAR DIFFUSED STRUCTURES
FAIRFIELD, JM
论文数:
0
引用数:
0
h-index:
0
FAIRFIELD, JM
SCHWUTTKE, GH
论文数:
0
引用数:
0
h-index:
0
SCHWUTTKE, GH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(04)
: 415
-
+
[6]
ANOMALOUS TEMPERATURE EFFECT OF OXIDATION STACKING-FAULTS IN SILICON
HU, SM
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
IBM CORP,SYST PROD DIV,E FISHKILL,HOPEWELL JUNCTION,NY 12533
HU, SM
[J].
APPLIED PHYSICS LETTERS,
1975,
27
(04)
: 165
-
167
[7]
DIFFUDION-INDUCED STRESS AND LATTICE DISORDERS IN SILICON
LAWRENCE, JE
论文数:
0
引用数:
0
h-index:
0
LAWRENCE, JE
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(08)
: 819
-
&
[8]
COST-SIZE OPTIMA OF MONOLITHIC INTEGRATED CIRCUITS
MURPHY, BT
论文数:
0
引用数:
0
h-index:
0
MURPHY, BT
[J].
PROCEEDINGS OF THE IEEE,
1964,
52
(12)
: 1537
-
&
[9]
DELETERIOUS EFFECTS OF AN OXIDIZING DRIVE-IN AMBIENT ON IMPLANTED ARSENIC EMITTERS IN (111) SILICON
PARRILLO, LC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
PARRILLO, LC
MORRIS, BL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,ALLENTOWN,PA 18103
BELL TEL LABS INC,ALLENTOWN,PA 18103
MORRIS, BL
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(04)
: 345
-
347
[10]
PARRILLO LC, 1977, IEDM135 PAP
←
1
2
→