COST-SIZE OPTIMA OF MONOLITHIC INTEGRATED CIRCUITS

被引:239
作者
MURPHY, BT
机构
关键词
D O I
10.1109/PROC.1964.3442
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1537 / &
相关论文
共 2 条
[1]   SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].
HOFSTEIN, SR ;
HEIMAN, FP .
PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1190-&
[2]   DESIGN CONSIDERATIONS FOR INTEGRATED ELECTRONIC DEVICES [J].
WALLMARK, JT .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1960, 48 (03) :293-300