EMITTER-COLLECTOR SHORTS IN BIPOLAR-DEVICES

[1] DIFFUSION PIPES IN SILICON NPN STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 304 - &

[2] BARSON F, 1975, MAY EL SOC M TOR

[3] DASH S, 1973, SEMICONDUCTOR SILICO, P626

[4] CROSS SECTIONS AND OHMIC RESISTANCE OF DIFFUSION PIPES IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (07) : 604 - 607

[5] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[6] PROCESS-INTRODUCED STRUCTURAL DEFECTS AND JUNCTION CHARACTERISTICS IN NPN SILICON EPITAXIAL PLANAR TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 1967 - &

[7] MAPPING OF ELECTRICAL LEAKAGE IN TRANSISTORS BY ANODIC-OXIDATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1098 - &

[8] LAWRENCE JE, 1973, SEMICONDUCTOR SILICO, P17

[9] MACKENNA EL, 1974, OCT EL SOC M NEW YOR

[10] Miller L. E., 1960, PROPERTIES ELEMENTAL, P303

[1] DIFFUSION PIPES IN SILICON NPN STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 304 - &

[2] BARSON F, 1975, MAY EL SOC M TOR

[3] DASH S, 1973, SEMICONDUCTOR SILICO, P626

[4] CROSS SECTIONS AND OHMIC RESISTANCE OF DIFFUSION PIPES IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (07) : 604 - 607

[5] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[6] PROCESS-INTRODUCED STRUCTURAL DEFECTS AND JUNCTION CHARACTERISTICS IN NPN SILICON EPITAXIAL PLANAR TRANSISTORS [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (06) : 1967 - &

[7] MAPPING OF ELECTRICAL LEAKAGE IN TRANSISTORS BY ANODIC-OXIDATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1098 - &

[8] LAWRENCE JE, 1973, SEMICONDUCTOR SILICO, P17

[9] MACKENNA EL, 1974, OCT EL SOC M NEW YOR

[10] Miller L. E., 1960, PROPERTIES ELEMENTAL, P303