A QUANTITATIVE STUDY OF THE RELATIONSHIP BETWEEN INTERFACIAL CARBON AND LINE DISLOCATION DENSITY IN SILICON MOLECULAR-BEAM EPITAXY

被引：19

作者：

MCFEE, JH ^{[1
]}

SWARTZ, RG ^{[1
]}

ARCHER, VD ^{[1
]}

FINEGAN, SN ^{[1
]}

FELDMAN, LC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 01期

关键词：

D O I：

10.1149/1.2119662

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：214 / 216

页数：3

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