MODULATION DOPING IN GE(X)SI(1-X)/SI STRAINED LAYER HETEROSTRUCTURES - EFFECTS OF ALLOY LAYER THICKNESS, DOPING SETBACK, AND CLADDING LAYER DOPANT CONCENTRATION

被引：50

作者：

PEOPLE, R

BEAN, JC

LANG, DV

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573328

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：846 / 850

页数：5

共 19 条

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