VERY HIGH-MOBILITY 2-DIMENSIONAL HOLE GAS IN SI/GEXSI1-X/GE STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：189

作者：

XIE, YH

MONROE, D

FITZGERALD, EA

SILVERMAN, PJ

THIEL, FA

WATSON, GP

机构：

[1] ATandT Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 16期

关键词：

D O I：

10.1063/1.110547

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Modulation-doped Si/GexSi1-x/Ge/GexSi1-x structures were fabricated in which a thin Ge layer was employed as the conduction channel for the two-dimensional hole gas. The strained heterostructure was fabricated on top of a low threading dislocation density, totally relaxed, GexSi1-x buffer layer with a linearly graded Ge concentration profile. The best mobility of the two-dimensional hole gas is 55000 cm2/V s at 4.2 K with a concentration-dependent hole effective mass of less-than-or-equal-to 0.10m0. The effect of the Ge/GeSi interface roughness on the 2DHG mobility was studied.

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页码：2263 / 2264

页数：2

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