Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers

被引：59

作者：

Peng, CS

Zhao, ZY

Chen, H

Li, JH

Li, YK

Guo, LW

Dai, DY

Huang, Q

Zhou, JM

Zhang, YH

Sheng, TT

Tung, CH

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 24期

关键词：

D O I：

10.1063/1.121579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Relaxed GexSi1-x epilayers with high Ge fractions but low threading dislocation densities have been successfully grown on Si (001) substrate by employing a stepped-up strategy and a set of low-temperature GeySi1-y buffers. We show that even if the Ge fraction rises up to 90%, the threading dislocation density can be kept lower than 5X10(6) cm(-2) in the top layers, while the total thickness of the structure is no more than 1.7 mu m. (C) 1998 American Institute of Physics.

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页码：3160 / 3162

页数：3

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