Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

被引：108

作者：

Linder, KK ^{[1
]}

Zhang, FC ^{[1
]}

Rieh, JS ^{[1
]}

Bhattacharya, P ^{[1
]}

Houghton, D ^{[1
]}

机构：

[1] SIGE MICROSYST INC,NEPEAN,ON K2C 9C4,CANADA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 24期

关键词：

D O I：

10.1063/1.119132

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 mu m LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as similar to 10(4) cm(-2). Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition. (C) 1997 American Institute of Physics.

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页码：3224 / 3226

页数：3

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