Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxy

被引：107

作者：

Chen, H ^{[1
]}

Guo, LW ^{[1
]}

Cui, Q ^{[1
]}

Hu, Q ^{[1
]}

Huang, Q ^{[1
]}

Zhou, JM ^{[1
]}

机构：

[1] CHINESE ACAD SCI,BEIJING LAB ELECTRON MICROSCOPY,BEIJING 100080,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 02期

关键词：

D O I：

10.1063/1.360899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method using a low-temperature Si (LT-Si) buffer layer is developed to grow a SiGe epilayer with low density of dislocations on a Si substrate by molecular-beam epitaxy. In this method, a LT-Si layer is used to release the stress of the SiGe layer. The samples have been investigated by x-ray double-crystal diffraction and transmission electron microscopy. The results indicate that the LT-Si is effective to release the stress and suppress threading dislocations: (C) 1996 American Institute of Physics.

引用

页码：1167 / 1169

页数：3

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