Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffers with low threading dislocation density

被引：92

作者：

Li, JH ^{[1
]}

Peng, CS ^{[1
]}

Wu, Y ^{[1
]}

Dai, DY ^{[1
]}

Zhou, JM ^{[1
]}

Mai, ZH ^{[1
]}

机构：

[1] CHINESE ACAD SCI,CTR CONDENSED MATTER PHYS,BEIJING 100080,PEOPLES R CHINA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 21期

关键词：

D O I：

10.1063/1.120268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si0.7Ge0.3 epilayers with low threading dislocation density have been grown on Si (001) substrates by introducing a low temperature Si buffer. Such a structure can be used as the buffer for the growth of device structures. In comparison with the conventional compositionally graded buffer system, it has the advantages of having lower threading dislocation density, smaller thickness for required degree of relaxation, and smoother surface. Experimental evidence suggests that an anomalous relaxation mechanism has been involved.

引用

页码：3132 / 3134

页数：3

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