Effect of substrate-induced strain on the structural, electrical, and optical properties of polycrystalline ZnO thin films

The effect of substrate-induced strain in polycrystalline ZnO thin films on different substrate, e.g., GaN epilayer, sapphire (0001), quartz glass, Si(111)/SiO2, and glass deposited by sol-gel process, has been investigated by x-ray diffraction, scanning electron microscope, electrical resistivity, and photoluminescence measurements. A strong dependence of orientation, crystallite size, and electrical resistivity upon the substrate-induced strain along the c axis has been found. The results of structural and morphological studies indicate that relatively larger tensile strain exists in ZnO deposited on sapphire and glass, while a smaller compressive strain appears in film deposited on GaN and the strain is relaxed in larger crystallite size. The electrical resistivity of the films increases exponentially with increasing strain. The excitonic peak positions are found to shift slightly towards lower energy side with increasing strain. The analysis shows that GaN being a closely lattice-matched substrate produces ZnO films of better crystallinity with a lower resistivity. (C) 2004 American Institute of Physics.