Large ferroelectric response in Bi4-xNdxTi3O12 films prepared by sol-gel process

被引：116

作者：

Melgarejo, RE

Tomar, MS ^{[1
]}

Bhaskar, S

Dobal, PS

Katiyar, RS

机构：

[1] Univ Puerto Rico, Dept Phys, Mayaguez, PR 00681 USA

[2] Univ Puerto Rico, Dept Phys, Rio Piedras, PR 00931 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 14期

关键词：

D O I：

10.1063/1.1511542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Neodymium-substituted Bi4Ti3O12 (i.e., Bi4-xNdxTi3O12) were synthesized by sol-gel process for different compositions. Thin films were deposited on Pt (i.e., Pt/TiO2/SiO2/Si) substrate by spin coating. Materials were characterized by x-ray diffraction and Raman spectroscopy. This study indicates that the material makes a solid solution for the compositions: x=0.00, 0.26, 0.46, 0.75, 0.85, 1.00, and 2.00, where an Nd ion replaces the Bi site. The prominent effect of Nd substitution is observed in low-frequency Raman modes. Sol-gel derived thin films of Bi3.54Nd0.46Ti3O12 on a Pt substrate and postannealed at 700degreesC were tested for ferroelectric response which showed high remnant polarization (P-r=25 muC/cm(2)). (C) 2002 American Institute of Physics.

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页码：2611 / 2613

页数：3

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