Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films?

被引：44

作者：

Tok, ES

Jones, TS

Neave, JH

Zhang, J

Joyce, BA

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT CHEM,LONDON SW7 2AY,ENGLAND

[2] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT PHYS,LONDON SW7 2AY,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 22期

关键词：

D O I：

10.1063/1.120312

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation coefficients of As-2 and As-4, Obtained from reflection high-energy electron diffraction intensity oscillations in the As-limited growth regime, are compared for the growth of GaAs on (001), (110), and (111)A surfaces by molecular beam epitaxy, The kinetic results are remarkably similar for (110) and (111)A, but very different from those obtained on (001). The incorporation coefficients decrease with increasing temperature for all three surfaces, with the effect being much more dramatic on (110) and (111) A. The low-and temperature-dependent incorporation coefficients on (110) and (111)A explain the need for high As:Ca flux ratios and low substrate temperatures in the preparation of high-quality GaAs epitaxial layers. (C) 1997 American Institute of Physics.

引用

页码：3278 / 3280

页数：3

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