In situ study of void growth kinetics in electroplated Cu lines

被引：64

作者：

Liniger, E ^{[1
]}

Gignac, L ^{[1
]}

Hu, CK ^{[1
]}

Kaldor, S ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 04期

关键词：

D O I：

10.1063/1.1492871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An in situ electromigration apparatus was used to study the kinetics of void growth in unpassivated, electropolated copper damascene lines. Voids were observed to grow by consuming grains in a stepwise fashion, either by grain thinning or by an edge displacement mechanism. Surface diffusion was found to be the primary diffusion path for void growth. In addition, grain boundaries provided a secondary path for copper diffusion in polycrystalline structures and nucleation sites for void growth in bamboo structures. Void growth rate was measured as a function of sample temperature and linewidth using a scanning electron microscope. An electromigration activation energy of 0.9+/-0.1 eV was determined for the copper voiding process. The effect of linewidth on void growth rate was also investigated and found to be negligible, consistent with a surface-diffusion dominated model for void growth. The in situ apparatus also made it possible to directly correlate changes in electrical resistance with physical changes taking place in the test structures. (C) 2002 American Institute of Physics.

引用

页码：1803 / 1810

页数：8

共 33 条

[1]

Augur RA, 1996, AIP CONF PROC, P279, DOI 10.1063/1.50934

[2] Electromigration damage in mechanically deformed Al onductor lines: Dislocations as fast diffusion paths [J].

Baker, SP ;

Joo, YC ;

Knauss, MP ;

Arzt, E .

ACTA MATERIALIA, 2000, 48 (09) :2199-2208

[3] ELECTROMIGRATION IN THIN ALUMINUM FILMS ON TITANIUM NITRIDE [J].

BLECH, IA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1203-1208

[4]

BONZEL HP, 1975, SURFACE PHYS MAT, V2, pCH6

[5]

Buerke A, 1999, AIP CONF PROC, V491, P162, DOI 10.1063/1.59904

[6] In-situ electromigration damage of Al interconnect lines and the influence of grain orientation [J].

Buerke, A ;

Wendrock, H ;

Kötter, T ;

Menzel, S ;

Wetzig, K ;

von Glasow, A .

MATERIALS RELIABILITY IN MICROELECTRONICS IX, 1999, 563 :109-114

[7]

Butrymowicz D. B., 1973, Journal of Physical and Chemical Reference Data, V2, P643, DOI 10.1063/1.3253129

[8] Dynamics of electromigration induced void/hillock growth and precipitation/dissolution of addition elements studied by in-situ scanning electron microscopy resistance measurements [J].

D'Haen, J ;

Cosemans, P ;

Manca, JV ;

Lekens, G ;

Martens, T ;

De Ceuninck, W ;

D'Olieslaeger, M ;

De Schepper, L ;

Maex, K .

MICROELECTRONICS RELIABILITY, 1999, 39 (11) :1617-1630

[9] A high-voltage scanning electron microscopy system for in situ electromigration testing [J].

Doan, JC ;

Lee, S ;

Lee, SH ;

Meier, NE ;

Bravman, JC ;

Flinn, PA ;

Marieb, TN ;

Madden, MC .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (07) :2848-2854

[10] A high performance liner for copper Damascene interconnects [J].

Edelstein, D ;

Uzoh, C ;

Cabral, C ;

DeHaven, P ;

Buchwalter, P ;

Simon, A ;

Cooney, E ;

Malhotra, S ;

Klaus, D ;

Rathore, H ;

Agarwala, B ;

Nguyen, D .

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2001, :9-11

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