Improved thermoelectric devices using bismuth alloys

被引:30
作者
Thonhauser, T [1 ]
Scheidemantel, TJ
Sofo, JO
机构
[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
[2] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1775286
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present first-principles transport calculations for bismuth utilizing the linearized-augmented plane-wave method. From the calculated transport distribution, we compute transport coefficients and our results agree well with experiment. Furthermore, we derive the power factor and find two pronounced maxima excelling even the power factor of Bi2Te3. These maxima can be related to the points of steepest slope in the transport distribution. This insight provides a very valuable guideline for the search of improved thermoelectric materials. The maximum in the power factor leads to a thermoelectric figure of merit of 1.44, which is considerably larger than the one for Bi2Te3. (C) 2004 American Institute of Physics.
引用
收藏
页码:588 / 590
页数:3
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