LOW-TEMPERATURE THERMOELECTRIC PROPERTIES OF TIN-DOPED BISMUTH

被引：13

作者：

BOXUS, J

HEREMANS, J

MICHENAUD, JP

ISSI, JP

机构：

[1] Universite Catholique de Loukain, Laboratoire PCES, B-1348 Louvain-la-Neuve, Place Croiv du Sud. I

来源：

JOURNAL OF PHYSICS F-METAL PHYSICS | 1979年 / 9卷 / 12期

关键词：

D O I：

10.1088/0305-4608/9/12/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical resistivity, thermal conductivity and thermopower of sixteen well characterised tin-doped bismuth samples are reported in the temperature range 2-300K. The results are compared with the existing data on single crystals which they complement. It is shown that good agreement is reached in the overlapping ranges when the tin concentrations are correctly assessed.

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页码：2387 / 2398

页数：12

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