Measurement of electron density of reactive plasma using a plasma oscillation method

被引：12

作者：

Kanoh, M ^{[1
]}

Tonotani, J ^{[1
]}

Aoki, K ^{[1
]}

Yamage, M ^{[1
]}

机构：

[1] Toshiba Co Ltd, Corp Mfg Engn Ctr, Isogo Ku, Yokohama, Kanagawa 2350017, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 6A期

关键词：

plasma density; plasma diagnostics; plasma oscillation; Langmuir probe; electron plasma frequency; reactive gas plasma;

D O I：

10.1143/JJAP.41.3963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measured the electron density of reactive plasma using a plasma oscillation probe and analyzed the mode change of power coupling during etching. The unique behavior of plasmas containing reactive negative ions is clarified. The change in the plasma reactor mode during silicon dioxide etching, from the inductive mode to the capacitive mode with increasing pressure, is investigated.

引用

页码：3963 / 3964

页数：2

共 6 条

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[2]

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[4]

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