Growth, microwave properties and microstructure of Ba0.05Sr0.95TiO3 thin films

被引：3

作者：

Koutsonas, I ^{[1
]}

Hu, WF

Jackson, TJ

Jones, IP

Lancaster, MJ

Passerieux, G

Chakalov, RA

Chakalova, RI

Darlington, CNW

机构：

[1] Univ Birmingham, Sch Engn, Birmingham B15 2TT, W Midlands, England

[2] Univ Birmingham, Sch Phys & Astron, Birmingham B15 2TT, W Midlands, England

来源：

INTEGRATED FERROELECTRICS | 2004年 / 61卷

基金：

英国工程与自然科学研究理事会;

关键词：

ferroelectric thin films; microwave devices;

D O I：

10.1080/10584580490459053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Charged defects were found to have a significant influence over the microwave properties of Ba0.05Sr0.95TiO3 thin films.

引用

页码：139 / 142

页数：4

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Vendik, OG ;

Zubko, SP ;

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