Hydrogen-induced 3 x 1 phase of the Si-rich 3C-SiC(001) surface

被引：18

作者：

Yeom, HW ^{[1
]}

Matsuda, I

Chao, YC

Hara, S

Yoshida, S

Uhrberg, RIG

机构：

[1] Univ Tokyo, Dept Appl Chem, Tokyo 1130033, Japan

[2] Univ Tokyo, Dept Chem, Tokyo 1130033, Japan

[3] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[4] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.61.R2417

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A single-domain 3 x 1 phase induced by hydrogen adsorption on a Si-rich 3C-SiC(001)3 x 2 surface is investigated by photoemission using synchrotron radiation. Three surface components of the Si 2p core level are identified for the 3 x 1-H phase, which resemble those of the 3 x 2 surface. A H-Si bonding state is observed by angle-resolved valence-band photoemission. These results are consistent with the recent assignments of the Si 2p surface components and the valence band spectra of the 3 x 2 surface, based on the 3 x 2 structure model with 2/3 ML Si addimers. A straightforward 3 x 1-H structure model is introduced featuring Si dimer-bond breaking and dangling-bond saturation.

引用

收藏

页码：R2417 / R2420

页数：4

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