Perfect cellular disorder in a two-dimensional system: Si cells on the 3C-SiC(001) surface

被引：14

作者：

Hara, S

Kitamura, J

Okushi, H

Misawa, S

Yoshida, S

Kajimura, K

Yeom, HW

Uhrberg, RIG

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[2] Univ Tokyo, Res Ctr Spectrochem, Bukyo Ku, Tokyo 113, Japan

[3] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

来源：

SURFACE SCIENCE | 1999年 / 421卷 / 1-2期

关键词：

angle resolved photoemission; ising models; scanning tunneling microscopy; silicon carbide; surface electronic phenomena; surface structure; morphology; roughness and topography; surface thermodynamics;

D O I：

10.1016/S0039-6028(98)00874-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using scanning tunneling microscopy, we have observed a random orientation of the two possible inter-dimer buckling directions without any intercell correlation on a vacancy-free 3C-SiC(001)-(3 x 2) surface. The very small surface state dispersions observed by photoemission support the picture of essentially non-interacting (3 x 2) cells. The perfect cellular disorder, with no intercell correlation, originates from the electron localization that can be inferred from the weak surface state dispersions. Our experimental findings indicate a zero dimensionality of this system. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：L143 / L149

页数：7

共 17 条

[1] ATOMIC-SCALE SURFACE MODIFICATIONS USING A TUNNELING MICROSCOPE [J].