The electronic structure of In- and As-terminated InAs(001) surfaces

被引：25

作者：

Hakansson, MC

Johansson, LSO

Andersson, CBM

Karlsson, UO

Olsson, LO

Kanski, J

Ilver, L

Nilsson, PO

机构：

[1] ROYAL INST TECHNOL,DEPT PHYS,S-10044 STOCKHOLM,SWEDEN

[2] CHALMERS UNIV TECHNOL,DEPT PHYS,S-41296 GOTHENBURG,SWEDEN

来源：

SURFACE SCIENCE | 1997年 / 374卷 / 1-3期

关键词：

angle resolved photoemission; indium arsenide; low index single crystal surfaces; semiconducting surfaces; surface electronic phenomena;

D O I：

10.1016/S0039-6028(96)00745-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The InAs(001) 2 x 4 and 4 x 2 surfaces have been investigated by angle-resolved photoemission. The X(3) and X(5) points were found to be located 6.0 and 2.7 eV below the valence band maximum, respectively, and the dispersion of bulk bands along the Gamma-X direction in the bulk Brillouin zone were well described by a theoretical calculation. From angle-resolved valence band spectra measured along the high symmetry directions [110] and [1(1) over bar0$], three surface induced stares were identified on both the InAs(001)4 x 2 and the InAs(001)2 x 4 surface. (C) 1997 Elsevier Science B.V.

引用

页码：73 / 79

页数：7

共 12 条

[1]

ANDERSSON CBM, 1995, P 22 INT C PHYS SEM, P489

[2] IDEAL (111), (110) AND (100) SURFACES OF SI, GE AND GAAS - COMPARISON OF THEIR ELECTRONIC-STRUCTURE [J].