IDEAL (111), (110) AND (100) SURFACES OF SI, GE AND GAAS - COMPARISON OF THEIR ELECTRONIC-STRUCTURE

被引：85

作者：

IVANOV, I

MAZUR, A

POLLMANN, J

机构：

来源：

关键词：

D O I：

10.1016/0039-6028(80)90209-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：365 / 384

页数：20

共 53 条

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