IDEAL (111), (110) AND (100) SURFACES OF SI, GE AND GAAS - COMPARISON OF THEIR ELECTRONIC-STRUCTURE

被引：85

作者：

IVANOV, I

MAZUR, A

POLLMANN, J

机构：

来源：

SURFACE SCIENCE | 1980年 / 92卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(80)90209-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：365 / 384

页数：20

共 53 条

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[12] INTRINSIC (111) SURFACE STATES OF GE, GAAS, AND ZNSE
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[13] SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS
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[14] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE
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[J]. PHYSICAL REVIEW B, 1978, 18 (04) : 1800 - 1812
[15] CHELIKOWSKY JR, 1976, PHYS REV B, V13, P826
[16] ELECTRONIC-STRUCTURE OF (111) SURFACE OF SEMICONDUCTORS
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[J]. PHYSICAL REVIEW B, 1975, 12 (12): : 5811 - 5823
[17] SURFACE AND INTERFACE STATES OF (111) FACES OF SEMICONDUCTORS
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LANNOO, M
[J]. SURFACE SCIENCE, 1978, 78 (01) : 24 - 36
[18] DANGLING BOND SURFACE-STATES IN (111) FACES OF ZINCBLENDE COMPOUNDS
DJAFARIROUHANI, B
DOBRZYNSKI, L
FLORES, F
LANNOO, M
TEJEDOR, C
[J]. SOLID STATE COMMUNICATIONS, 1978, 27 (01) : 29 - 31
[19] PSEUDOPOTENTIAL CALCULATION OF SURFACE BAND-STRUCTURE OF SI (111) FACES
ELICES, M
FLORES, F
LOUIS, E
RUBIO, J
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (17): : 3020 - 3032
[20] SURFACE-STATES IN (111) AND (111) FACES OF ZINCBLENDE COMPOUNDS
FLORES, F
TEJEDOR, C
MARTINRODERO, A
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 88 (02): : 591 - 597

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