SURFACE ELECTRONIC-STRUCTURE OF INSB(100)4X1 STUDIED BY ANGLE-RESOLVED PHOTOELECTRON-SPECTROSCOPY

被引：9

作者：

OLSSON, LO

KHAZMI, YO

KANSKI, J

ILVER, L

NILSSON, PO

HAKANSSON, MC

KARLSSON, UO

机构：

[1] LUND UNIV, DEPT SYNCHROTRON RADIAT RES, S-22362 LUND, SWEDEN

[2] ROYAL INST TECHNOL, DEPT PHYS, S-10044 STOCKHOLM, SWEDEN

来源：

SURFACE SCIENCE | 1995年 / 331卷

关键词：

ANGLE RESOLVED PHOTOEMISSION; ANTIMONY; INDIUM; INDIUM ANTIMONIDE; LOW ENERGY ELECTRON DIFFRACTION (LEED); LOW INDEX SINGLE CRYSTAL SURFACES; SEMICONDUCTING SURFACES; SURFACE ELECTRONIC PHENOMENA;

D O I：

10.1016/0039-6028(95)00133-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface electronic structure of the In-rich InSb(100)4 X 1 surface has been studied by angle-resolved photoelectron spectroscopy. To determine the origin of different contributions in spectra, direct bulk interband transitions were first identified using a semi-empirical band structure calculation and assuming direct transitions into free electron-like final bands. Three surface-induced features were identified and their dispersions have been mapped along symmetry directions of the surface Brillouin zone.

引用

页码：1176 / 1180

页数：5

共 14 条

[1] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].