Structural study of Rh(100)-c(2x2)-S using the normal-incidence standing X-ray wavefield method

被引：11

作者：

Mercer, JR

Scarel, G

Santoni, A

Cowie, BCC

Lewis, D

Robinson, AW

McGrath, R

Dhanak, VR

机构：

[1] UNIV LIVERPOOL,IRC SURFACE SCI,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND

[2] INFM,LAB TASC,I-34012 TRIESTE,ITALY

[3] ENEA,INN,SETTORE NUOVI MAT,I-00100 ROME,ITALY

[4] SERC,DARESBURY LAB,CCLRC,WARRINGTON WA4 4AD,CHESHIRE,ENGLAND

[5] UNIV LIVERPOOL,DEPT PHYS,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND

来源：

SURFACE SCIENCE | 1996年 / 369卷 / 1-3期

基金：

英国工程与自然科学研究理事会;

关键词：

chalcogens; chemisorption; low index single crystal surfaces; rhodium; sulphur;

D O I：

10.1016/S0039-6028(96)00899-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The adsorption site for sulphur in the Rh(100)-c(2 x 2)-S system has been investigated using the normal-incidence standing X-ray wavefield adsorption (NISXW) technique. Two Bragg reflecting planes were used for the measurements, the (200) plane (parallel to the surface) and the (111) plane (inclined 54.7 degrees to the surface). The distance between the S atoms and the surface plane was found to be 1.38+/-0.05 Angstrom. The adsorption site was determined by triangulation of the distances between the S atoms and the (200) and (111) planes, coupled with comparison of the measured coherent fractions with calculations of the expected values. The results indicate that S adsorbs in the symmetric four-fold hollow site, as found for S adsorption on other fcc(100) surfaces.

引用

页码：36 / 44

页数：9

共 40 条

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[Anonymous], SURFACE SCI REPT

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