Characteristics of Ru as a buffer layer or an etch stopper for EUVL mask patterning

被引：9

作者：

Lee, BT ^{[1
]}

Hoshino, E ^{[1
]}

Takahashi, M ^{[1
]}

Yoneda, T ^{[1
]}

Yamanashi, H ^{[1
]}

Hoko, H ^{[1
]}

Chiba, A ^{[1
]}

Ito, M ^{[1
]}

Ogawa, T ^{[1
]}

Okazaki, S ^{[1
]}

机构：

[1] Assoc Super Adv Elect Technol, Atsugi Res Ctr, NTT Telecommun Energy Labs, Atsugi, Kanagawa 2430198, Japan

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 61-2卷

关键词：

EUVL; photomask; Ru; buffer layer; etch stopper;

D O I：

10.1016/S0167-9317(02)00534-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The feasibility of using Ru as a buffer layer or an etch stopper in EUVL masks was examined. Ru exhibits a high etching selectivity both to Si (for Ru buffer layer) and SiO2 (for Ru etch stopper). This can lead to a simple patterning process that does not damage the multilayer. An additional advantage of Ru as a buffer layer is its slow etch rate by a focused ion beam for repair buffer. Furthermore, the use of Ru improves the repair inspection contrast. A Ru layer exhibits very good properties both as a buffer layer and an etch stopper for EUVL mask patterning. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：233 / 239

页数：7

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