High precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry

The metrology section of the 1999 International Technology Roadmap for Semiconductors specifies in-line dopant profile concentration precision requirements ranging from a value of 5% in 1999 to a value of 2% in 2008. These values are to be accomplished with "low systematic error." Secondary ion mass spectrometry (SIMS) has demonstrated the capability to meet these requirements for B, As, and P. However, the detailed analytical protocols required to achieve these goals have not been completely specified. This article reports the parameters that must be controlled to make highly repeatable dose measurements of As and P implants in Si with magnetic sector SIMS instruments. Instrument conditions that were investigated include analytical species, matrix ion species, energy bandpass, and sample holder design. With optimized settings, we demonstrate the ability to distinguish As or P implant doses differing by 5%. (C) 2002 American Vacuum Society.