Scanning force microscopy study of domain structure in Pb(ZrxTi1-x)O-3 thin films and Pt/PZT/Pt and RuO2/PZT/RuO2 capacitors

被引：16

作者：

Auciello, O ^{[1
]}

Gruverman, A ^{[1
]}

Tokumoto, H ^{[1
]}

机构：

[1] NATL INST ADV INTERDISCIPLINARY RES,JOINT RES CTR ATOM TECHNOL,TSUKUBA,IBARAKI 305,JAPAN

来源：

INTEGRATED FERROELECTRICS | 1997年 / 15卷 / 1-4期

关键词：

D O I：

10.1080/10584589708015701

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A piezoresponse technique based on scanning force microscopy has been used for studying domain structure in ferroelectric thin films. Studies were performed on Pb(Zr-x,Ti1-x)O-3 (PZT) thin films and PZT-based capacitors with the ferroelectric layer produced by a sol-gel method. Piezoresponse images were taken for different systems materials: (a) before and after inducing polarization in PZT films by applying a dc voltage between the bottom electrode and the SFM tip, and (b) on top electrodes of fatigued and non-fatigued Pt/PZT/Pt and RuO2/PZT/RuO2 capacitors. Effect of the PZT film and capacitor structures on the imaging resolution of domains is discussed.

引用

页码：107 / 114

页数：8

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