GaAsSb: A novel material for near infrared photodetectors on GaAs substrates

被引：47

作者：

Sun, XG ^{[1
]}

Wang, SL ^{[1
]}

Hsu, JS ^{[1
]}

Sidhu, R ^{[1
]}

Zheng, XGG ^{[1
]}

Li, XW ^{[1
]}

Campbell, JC ^{[1
]}

Holmes, AL ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78712 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2002年 / 8卷 / 04期

基金：

美国国家科学基金会;

关键词：

photodetectors; photodiodes; photoluminescence; quantum wells;

D O I：

10.1109/JSTQE.2002.800848

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the molecular beam epitaxy (MBE) growth of GaAsSb on GaAs substrates. The optical properties and composition of GaAsSb layer strongly depend on the growth temperature, the Ga growth rate, and the As and Sb fluxes and their ratios. We also report on two GaAsSb-GaAs photodiode structures operating at 1.3 mum. The peak quantum efficiency was 54% for the GaAsSb resonant-cavity-enhanced (RCE) p-i-n photodiode and 36% for the RCE GaAsSb avalanche photodiode (APD) with separate absorption, charge, and multiplication regions (SACM). At 90% of the breakdown, the dark current of the SACM APD was 5 nA. The GaAsSb SACM APD also exhibited very low multiplication noise and k(eff) was approximately 0.1, which is the lowest ever reported for APDs operating at 1.3 mum.

引用

页码：817 / 822

页数：6

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