Controlling the carrier recombination zone for improved color stability in a two-dopant fluorophore/phosphor white organic light-emitting diode

被引：64

作者：

Bhansali, Unnat S. ^{[2
]}

Jia, Huiping ^{[2
]}

Quevedo Lopez, M. A. ^{[2
]}

Gnade, Bruce E. ^{[2
]}

Chen, Wei-Hsuan ^{[1
]}

Omary, Mohammad A. ^{[1
]}

机构：

[1] Univ N Texas, Dept Chem, Denton, TX 76203 USA

[2] Univ Texas Dallas, Erik Jonsson Sch Engn & Comp Sci, Dept Mat Sci & Engn, Richardson, TX 75083 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 20期

关键词：

brightness; electron-hole recombination; fluorescence; organic compounds; organic light emitting diodes; phosphorescence; DEVICES; BLUE; EFFICIENCY; EMISSION;

D O I：

10.1063/1.3089867

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A white organic light-emitting diode (WOLED) is produced upon systematic introduction of deep-blue fluorescence from 4,4(')-bis(9-ethyl-3-carbazovinylene)-1,1(')-biphenyl to broad-band yellow phosphorescence from bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) in the common host 4,4(')-bis(carbazol-9-yl)biphenyl. The carrier recombination zone is first identified upon investigating alternative device structures, then optimized by varying the thickness of the electron-transport layer. The WOLED exhibits striking stability of color and efficiency, as manifest by parameters at high brightness of 1000 cd/m(2) sustaining 94%-122% their values at 50 cd/m(2).

引用

页数：3

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