SiC and GaN bipolar power devices

被引：75

作者：

Chow, TP ^{[1
]}

Khemka, V ^{[1
]}

Fedison, J ^{[1
]}

Ramungul, N ^{[1
]}

Matocha, K ^{[1
]}

Tang, Y ^{[1
]}

Gutmann, RJ ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA

来源：

SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0038-1101(99)00235-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The present status of the silicon carbide and gallium nitride bipolar power semiconductor devices is reviewed. Several unipolar and bipolar figures of merit have been examined to demonstrate the potential performance gain to be obtained from silicon carbide and gallium nitride based power devices. Several conventional as well as novel device structures have been examined, some of which have already been demonstrated and others are in their early stages of development. Conventional silicon theory has often been found to be inadequate to explain the characteristics of silicon carbide. Appropriate modifications have been applied to investigate more complicated characteristics of silicon carbide devices. (C) 2000 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：277 / 301

页数：25

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