High-Q millimeter-wave MEMS varactors: Extended tuning range and discrete-position designs

被引：42

作者：

Dussopt, L ^{[1
]}

Rebeiz, GM ^{[1
]}

机构：

[1] Univ Michigan, Radiat Lab, Ann Arbor, MI 48109 USA

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011869

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design, fabrication and measurement of two high-Q micro-electro-mechanical (MEMS) varactors suitable for 20-60 GHz applications. The varactors are composed of a movable bridge placed in a shunt configuration on a coplanar waveguide line. The first design is an extended tuning range varactor showing a capacitance ratio of 1.46. The second design demonstrates a discrete-position varactor with a capacitance ratio of 1.90. Both designs result in a tuning voltage of 18-25 V and an excellent quality factor of 95-100 at 34 GHz (C = 80 W). The very high resonant frequency of the varactors makes them suitable for applications at microwave and millimeter-wave frequencies.

引用

页码：1205 / 1208

页数：4

共 7 条

[1] Micromachined electro-mechanically tunable capacitors and their applications to RF IC's [J].