Atomic-layer deposition of Lu2O3

被引：93

作者：

Scarel, G

Bonera, E

Wiemer, C

Tallarida, G

Spiga, S

Fanciulli, M

Fedushkin, IL

Schumann, H

Lebedinskii, Y

Zenkevich, A

机构：

[1] INFM, Lab Nazl Mat & Disposit Microelettron, I-20041 Agrate Brianza, MI, Italy

[2] Tech Univ Berlin, Inst Chem, D-10623 Berlin, Germany

[3] Moscow Engn Phys Inst, Moscow 115409, Russia

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 04期

关键词：

D O I：

10.1063/1.1773360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rare earth oxides could represent a valuable alternative to SiO2 in complementary metal-oxide-semiconductor devices. Lu2O3 is proposed because of its predicted thermodynamical stability on silicon and large conduction band offset. We report on the growth by atomic-layer deposition of lutetium oxide films using the dimeric {[C5H4(SiMe3)](2)LuCl}(2) complex, which has been synthesized for this purpose, and H2O. The films were found to be stoichiometric, with Lu2O3 composition, and amorphous. Annealing in nitrogen at 950degreesC leads to crystallization in the cubic bixbyite structure. The dielectric constant of the as-grown Lu2O3 layers is 12+/-1. (C) 2004 American Institute of Physics.

引用

页码：630 / 632

页数：3

共 21 条

[1] Physical and electrical characterization of ultrathin yttrium silicate insulators on silicon [J].