OH-related emitting centers in interface layer of porous silicon

被引：26

作者：

Torchynska, TV ^{[1
]}

Sheinkman, MK

Korsunskaya, NE

Khomenkovan, LY

Bulakh, BM

Dzhumaev, BR

Many, A

Goldstein, Y

Savir, E

机构：

[1] UPALM, Dept Mat Sci, ESFM, Natl Politech Inst, Mexico City 07738, DF, Mexico

[2] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-252650 Kiev, Ukraine

[3] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Givat Ram, Israel

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

关键词：

porous silicon; photoluminescence; photoluminescence excitation;

D O I：

10.1016/S0921-4526(99)00563-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Photoluminescence and excitation spectra measurements as well as SIMS and FTIR techniques were used to investigate the photoluminescence excitation mechanism of porous silicon. It is shown that there are two types of photoluminescence excitation spectra which consist either of two, visible and ultraviolet, or one, only ultraviolet, bands. The dependence of photoluminescence excitation spectra upon the various treatment (aging in vacuum, in air and in liquids) indicates that the excitation in the visible range occurs via light absorption of some species on the porous Si surface. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：955 / 958

页数：4

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