HYDROGEN TERMINATION AND OPTICAL-PROPERTIES OF POROUS SILICON - PHOTOCHEMICAL ETCHING EFFECT

被引：36

作者：

KANEMITSU, Y ^{[1
]}

MATSUMOTO, T ^{[1
]}

FUTAGI, T ^{[1
]}

MIMURA, H ^{[1
]}

机构：

[1] NIPPON STEEL CORP LTD,ELECTR RES LABS,SAGAMIHARA,KANAGAWA 229,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

POROUS SI; PHOTOCHEMICAL ETCHING; PHOTOLUMINESCENCE; PICOSECOND SPECTROSCOPY; PHOTOLUMINESCENCE EXCITATION SPECTRUM; SI CLUSTER;

D O I：

10.1143/JJAP.32.411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied photoluminescence (PL) from porous Si depending on the hydrogen termination on Si nanocrystallites. The hydrogen concentration in the samples was controlled by photochemical etching after the electrochemical anodization. The PL spectra, the PL excitation spectra and the picosecond PL decay rate were sensitive to the photochemical etching process. Spectroscopic analysis suggests that the photocarriers are generated in the inside of the Si crystallites and the radiative recombination occurs at the near-surface region of the Si crystallites.

引用

页码：411 / 414

页数：4

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