Influence of the growth procedure on the Cd distribution in CdSe/ZnSe heterostructures: Stranski-Krastanov versus two-dimensional islands

被引：38

作者：

Litvinov, D

Rosenauer, A

Gerthsen, D

Kratzert, P

Rabe, M

Henneberger, F

机构：

[1] Univ Karlsruhe, Lab Elektronenmikroskopie, D-76128 Karlsruhe, Germany

[2] Humboldt Univ, Inst Phys, D-10115 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 04期

关键词：

D O I：

10.1063/1.1496133

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular beam epitaxy is used to grow different types of ZnSe/CdSe/ZnSe heterostructures. The topography of the bare CdSe surface studied with in situ atomic force microscopy is compared with high-resolution transmission electron microscopy data on overgrown structures. The growth procedure critically influences morphology and Cd distribution. Only use of thermal activation after low-temperature CdSe deposition enables the accomplishment of a distinct Stranski-Krastanov (SK) morphology with three-dimensional islands with a core of pure CdSe. Interdiffusion effects during activation of the SK transition as well as overgrowth are of minor importance. (C) 2002 American Institute of Physics.

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页码：640 / 642

页数：3

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