Nondestructive detection of stacking faults for optimization of CdSe/ZnSe quantum-dot structures

被引：16

作者：

Passow, T ^{[1
]}

Heinke, H ^{[1
]}

Falta, J ^{[1
]}

Leonardi, K ^{[1
]}

Hommel, D ^{[1
]}

机构：

[1] Univ Bremen, Inst Festkorperphys, D-28334 Bremen, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 22期

关键词：

D O I：

10.1063/1.1328760

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CdSe/ZnSe quantum structures were systematically investigated by high-resolution x-ray diffraction. The samples were grown at different growth temperatures on GaAs(001) substrates by molecular-beam epitaxy. A model is presented enabling the simulation and quantitative analysis of x-ray diffraction profiles influenced by stacking faults. This yields a fast and nondestructive method for the determination of stacking fault densities after calibration by transmission electron microscopy. A steep increase of the stacking fault density above a critical thickness was found. The critical thickness decreases with increasing growth temperature. Above this critical thickness, the amount of incorporated CdSe remains apparently constant. (C) 2000 American Institute of Physics. [S0003-6951(00)01648-X].

引用

页码：3544 / 3546

页数：3

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