Silicon-based high-Q inductors incorporating electroplated copper and low-K BCB dielectric

被引：70

作者：

Huo, X ^{[1
]}

Chen, KJ ^{[1
]}

Chan, PCH ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 09期

关键词：

benzocyclobutene (BCB); CMOS; electroplated copper; high-Q inductor; silicon substrate;

D O I：

10.1109/LED.2002.802652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

We have fabricated high-Q copper inductors using low-K benzocyclobutene (BCB) dielectric as an interface layer on standard CMOS silicon substrate. Metal ohmic loss and substrate loss, the two major factors that degrade the Q-factors of on-chip inductors, are suppressed by the employment of electroplated copper and the BCB dielectric, respectively. The inductors exhibit Q-factors as high as 25 at 2 GHz. The dependence of inductor's high-frequency performance on inductor's parameters, such as BCB and copper thickness, has been investigated in detail. The inductor fabrication process is low-cost and low-temperature, making it suitable for post-IC process for high-performance RFICs and MMICs.

引用

页码：520 / 522

页数：3

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