Oriented and polycrystalline NdNiO3 thin films on silicon substrate

被引:21
作者
Laffez, P [1 ]
Zaghrioui, M
Retoux, R
Lacorre, P
机构
[1] Univ Maine, Lab Phys Etat Condense, CNRS, UPRESA 6087, F-72085 Le Mans 9, France
[2] Univ Maine, Lab Fluorures, UPRESA 6010, F-72017 Le Mans 9, France
关键词
metal-insulator transition; perovskite; RF sputtering; thin films;
D O I
10.1016/S0304-8853(99)00721-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
NdNiO3 thin films deposited on Si(1 0 0) were prepared by RF sputtering and subsequent oxygen annealing. Films deposited at 250 degrees C are polycrystalline with a metal-insulator transition around 150 K. Films grown at 600 degrees C are oriented, with a transition temperature around 200 K as usually observed in bulk ceramics. To our knowledge it is the first time that oriented thin films synthesis of NdNiO3 on Si(1 0 0) is reported. Combination of X-ray diffraction and high-resolution electron microscopy was used for characterising the films. The relationship between microstructure and transport properties is discussed. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:111 / 117
页数:7
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