Polytypism and surface structure of SiC

被引:14
作者
Kackell, P
Furthmuller, J
Bechstedt, F
机构
[1] Friedrich-Schiller-Univ. Jena, Inst. Festkorpertheorie Theor. Optik, D-07743 Jena
关键词
silicon carbide; surface structure; theory; first principles calculations;
D O I
10.1016/S0925-9635(97)00089-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Within the framework of density functional theory (DFT) in the local density approximation (LDA) using ultrasoft VanderbiIt pseudopotentials in a plane wave basis we investigate the atomic and electronic structure of 3C SiC(111) and nH SiC(0001) surfaces (1 x 1 and root 3 x root 3 reconstructions) and of 3C SiC(00 (1) over bar) surfaces (2 x 2. reconstructions). Since (111)/(0001) is the natural growth direction, the 3C SiC(111)/nH SiC(0001) surfaces are of special interest. Atomic geometries of various reconstructions, their relative stability and their electronic structure (surface band structure) are discussed. The theoretical results are compared with available experiments, (C) 1997 Elsevier Science S.A.
引用
收藏
页码:1346 / 1348
页数:3
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