Bound delocalized excited states in I-Xen clusters

被引:39
作者
Becker, I
Markovich, G
Cheshnovsky, O
机构
[1] School of Chemistry, Sackler Faculty of Exact Sciences, Tel-Aviv University, Tel-Aviv
关键词
D O I
10.1103/PhysRevLett.79.3391
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
By combining photoelectron spectra and photodetachment action spectra of I-Xen clusters (n = 1-12), we have identified bound extended excited electronic states. The critical size to the binding of such states is n > 4-5. The spatial confinement and the binding energy of the excited stales increase monotonously with the cluster size. We discuss the analogy between these bound electronic states and the binding of excess electrons in the Xe-n(-) clusters. This study introduces a new methodology for the investigation of empty bands in clusters, residing above or below the vacuum level, via the excitation of slightly perturbing impurity states.
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页码:3391 / 3394
页数:4
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