Electron and hole states in diluted magnetic semiconductor quantum dots

被引:33
作者
Chang, K
Li, SS
Xia, JB
Peeters, FM
机构
[1] Chinese Acad Sci, Inst Semicond, NLSM, Beijing 100083, Peoples R China
[2] Univ Antwerp, Dept Phys, B-2610 Antwerp, Belgium
基金
中国国家自然科学基金;
关键词
D O I
10.1103/PhysRevB.69.235203
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of a diluted magnetic semiconductor (DMS) quantum dot (QD) is studied within the framework of the effective-mass theory. We find that the energies of the electron with different spin orientation exhibit different behavior as a function of magnetic field at small magnetic fields. The energies of the hole decreases rapidly at low magnetic fields and saturate at higher magnetic field due to the sp-d exchange interaction between the carriers and the magnetic ions. The mixing effect of the hole states in the DMS QD can be tuned by changing the external magnetic field. An interesting crossing behavior of the hole ground state between the heavy-hole state and the light-hole state is found with variation of the QD radius. The strength of the interband optical transition for different circular polarization exhibts quite different behavior with increasing magnetic field and QD radius.
引用
收藏
页码:235203 / 1
页数:8
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