Pulsed laser deposition of carbon nitride thin films in nitrogen gas ambient

被引：21

作者：

Okoshi, M ^{[1
]}

Kumagai, H ^{[1
]}

Toyoda, K ^{[1
]}

机构：

[1] RIKEN,INST PHYS & CHEM RES,LASER SCI RES GRP,WAKO,SAITAMA 35101,JAPAN

来源：

JOURNAL OF MATERIALS RESEARCH | 1997年 / 12卷 / 12期

关键词：

D O I：

10.1557/JMR.1997.0443

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon nitride thin films have been successfully deposited by ablating a graphite target (99.999%) in nitrogen gas ambient using the second (532 nm) or third (355 nm) harmonic of a Q-switched Nd:YAG laser. Carbon nitride films consisting of approximately 40% nitrogen were obtained at 7.5 x 10(-3) Pa of nitrogen gas pressure using the third harmonic laser. The C-N chemical bond in the films was observed by x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Ellipsometric studies revealed that the refractive index of the fabricated films decreased with increasing nitrogen concentration.

引用

页码：3376 / 3379

页数：4

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