Enhanced diffusion in nonstoichiometric quantum wells and the decay of supersaturated vacancy concentrations

被引：32

作者：

Lahiri, I

Nolte, DD

Melloch, MR

Woodall, JM

Walukiewicz, W

机构：

[1] PURDUE UNIV,MRSEC TECHNOL ENABLING HETEROSTRUCT MAT,W LAFAYETTE,IN 47907

[2] PURDUE UNIV,SCH ELECT & COMP ENGN,W LAFAYETTE,IN 47907

[3] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 02期

关键词：

D O I：

10.1063/1.117936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Enhanced superlattice disordering in nonstoichiometric AlAs/GaAs quantum wells exhibits weak temperature dependence because of the decay of the supersaturated concentration of group-III vacancies. We present a formalism for transient enhanced diffusion in nonstoichiometric materials with which we can extract migration enthalpies H-m by assuming that the vacancy decay is thermally activated with an enthalpy H-a. By analyzing the electroabsorption from the quantum-confined Stark effect for a set of isochronal and isothermal anneals, we extract a migration enthalpy H-m=(1.8+/-0.2) eV for group-III vacancies, as well as an activation enthalpy H-a=(0.7+/-0.2) eV for vacancy annihilation. (C) 1996 American Institute of Physics.

引用

收藏

页码：239 / 241

页数：3

相关论文

共 16 条

[1] DIFFERENTIAL AL-GA INTERDIFFUSION IN ALGAAS/GAAS AND ALGAINP/GAINP HETEROSTRUCTURES [J].

BEERNINK, KJ ;

SUN, D ;

TREAT, DW ;

BOUR, BP .

APPLIED PHYSICS LETTERS, 1995, 66 (26) :3597-3599

[2]

BLISS DE, 1993, J ELECTRON MATER, V22, P1401, DOI 10.1007/BF02649985

[3] ANNEALING STUDIES OF LOW-TEMPERATURE-GROWN GAAS-BE [J].

BLISS, DE ;

WALUKIEWICZ, W ;

AGER, JW ;

HALLER, EE ;

CHAN, KT ;

TANIGAWA, S .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) :1699-1707

[4] INVESTIGATION OF INTERFACE INTERMIXING AND ROUGHENING IN LOW-TEMPERATURE-GROWN ALAS/GAAS MULTIPLE-QUANTUM WELLS DURING THERMAL ANNEALING BY CHEMICAL LATTICE IMAGING AND X-RAY-DIFFRACTION [J].

CHANG, JCP ;

WOODALL, JM ;

MELLOCH, MR ;

LAHIRI, I ;

NOLTE, DD ;

LI, NY ;

TU, CW .

APPLIED PHYSICS LETTERS, 1995, 67 (23) :3491-3493

[5] ATOM DIFFUSION AND IMPURITY-INDUCED LAYER DISORDERING IN QUANTUM WELL III-V SEMICONDUCTOR HETEROSTRUCTURES [J].

DEPPE, DG ;

HOLONYAK, N .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (12) :R93-R113

[6] Implant damage and transient enhanced diffusion in Si [J].

Eaglesham, DJ ;

Stolk, PA ;

Gossmann, HJ ;

Haynes, TE ;

Poate, JM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 106 (1-4) :191-197

[7] NONLINEAR DIFFUSION IN MULTILAYERED SEMICONDUCTOR SYSTEMS [J].

KIM, Y ;

OURMAZD, A ;

BODE, M ;

FELDMAN, RD .

PHYSICAL REVIEW LETTERS, 1989, 63 (06) :636-639

[8] FEMTOSECOND EXCITONIC OPTOELECTRONICS [J].

KNOX, WH ;

HENRY, JE ;

GOOSSEN, KW ;

LI, KD ;

TELL, B ;

MILLER, DAB ;

CHEMLA, DS ;

GOSSARD, AC ;

ENGLISH, J ;

SCHMITTRINK, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (12) :2586-2595

[9] ULTRAFAST-LIFETIME QUANTUM-WELLS WITH SHARP EXCITON SPECTRA [J].

LAHIRI, I ;

NOLTE, DD ;

HARMON, ES ;

MELLOCH, MR ;

WOODALL, JM .

APPLIED PHYSICS LETTERS, 1995, 66 (19) :2519-2521

[10] THE ROLE OF EXCESS ARSENIC IN INTERFACE MIXING IN LOW-TEMPERATURE-GROWN ALAS/GAAS SUPERLATTICES [J].

LAHIRI, I ;

NOLTE, DD ;

CHANG, JCP ;

WOODALL, JM ;

MELLOCH, MR .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1244-1246