DIFFERENTIAL AL-GA INTERDIFFUSION IN ALGAAS/GAAS AND ALGAINP/GAINP HETEROSTRUCTURES

被引：24

作者：

BEERNINK, KJ

SUN, D

TREAT, DW

BOUR, BP

机构：

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 26期

关键词：

D O I：

10.1063/1.113799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interdiffusion of Al and Ga in Al0.4Ga0.6As/GaAs and Al0.3Ga0.2In0.5P/Ga0.6In 0.4P quantum wells has been investigated by measuring the photoluminescence of samples annealed at temperatures from 850 to 1065°C with and without an SiO2 cap. At 1000°C under an SiO2 cap, the Al-Ga interdiffusion coefficient is found to be at least two orders of magnitude larger for an AlGaAs/GaAs quantum well compared to an AlGaInP/GaInP quantum well within the same sample. By comparing calculated photoluminescence shifts with measured values, an activation energy of 4.5 eV is found for the Al-Ga interdiffusion in an AlGaAs/GaAs quantum well under an SiO2 cap.© 1995 American Institute of Physics.

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页码：3597 / 3599

页数：3

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