DEPTH-DEPENDENT NATIVE-DEFECT-INDUCED LAYER DISORDERING IN ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURES

被引：41

作者：

GUIDO, LJ ^{[1
]}

HOLONYAK, N ^{[1
]}

HSIEH, KC ^{[1
]}

BAKER, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.100984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：262 / 264

页数：3

共 9 条

[1] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS
BARAFF, GA
SCHLUTER, M
[J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330
[2] WAVELENGTH MODIFICATION OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS BY LAYER INTERDIFFUSION
CAMRAS, MD
HOLONYAK, N
BURNHAM, RD
STREIFER, W
SCIFRES, DR
PAOLI, TL
LINDSTROM, C
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 5637 - 5641
[3] STRIPE-GEOMETRY QUANTUM-WELL HETEROSTRUCTURE ALXGA1-XAS-GAAS LASERS DEFINED BY DEFECT DIFFUSION
DEPPE, DG
GUIDO, LJ
HOLONYAK, N
HSIEH, KC
BURNHAM, RD
THORNTON, RL
PAOLI, TL
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (09) : 510 - 512
[4] EFFECTS OF DIELECTRIC ENCAPSULATION AND AS OVERPRESSURE ON AL-GA INTERDIFFUSION IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES
GUIDO, LJ
HOLONYAK, N
HSIEH, KC
KALISKI, RW
PLANO, WE
BURNHAM, RD
THORNTON, RL
EPLER, JE
PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (04) : 1372 - 1379
[5] CARBON-DOPED ALXGA1-XAS-GAAS QUANTUM WELL LASERS
GUIDO, LJ
JACKSON, GS
HALL, DC
PLANO, WE
HOLONYAK, N
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (07) : 522 - 524
[6] GUIDO LJ, 1987, J APPL PHYS, V61, P1371
[7] WAVELENGTH MODIFICATION (DELTA-H-OMEGA = 10-40 MEV) OF ROOM-TEMPERATURE CONTINUOUS QUANTUM-WELL HETEROSTRUCTURE LASER-DIODES BY THERMAL ANNEALING
MEEHAN, K
HOLONYAK, N
BURNHAM, RD
PAOLI, TL
STREIFER, W
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 7190 - 7191
[8] THERMAL-ANNEAL WAVELENGTH MODIFICATION OF MULTIPLE-WELL P-N ALXGA1-X AS-GAAS QUANTUM-WELL LASERS
MEEHAN, K
BROWN, JM
GAVRILOVIC, P
HOLONYAK, N
BURNHAM, RD
PAOLI, TL
STREIFER, W
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (07) : 2672 - 2675
[9] MECHANISM OF FERMI-LEVEL STABILIZATION IN SEMICONDUCTORS
WALUKIEWICZ, W
[J]. PHYSICAL REVIEW B, 1988, 37 (09): : 4760 - 4763

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