MECHANISM OF FERMI-LEVEL STABILIZATION IN SEMICONDUCTORS

[1] AKIMCHENKO IP, 1979, SOV PHYS SEMICOND+, V13, P1292

[2] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[3] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7346 - 7348

[4] BARDEEN J, 1947, PHYS REV, V71, P777

[5] BRUDNYI VN, 1985, SOV PHYS SEMICOND+, V19, P460

[6] BRUDNYI VN, 1982, SOV PHYS SEMICOND+, V16, P21

[7] BRUDNYI VN, 1986, SOV PHYS SEMICOND+, V20, P320

[8] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6182 - 6194

[9] FAST-NEUTRON BOMBARDMENT OF GASB [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1614 - 1618

[10] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729

[1] AKIMCHENKO IP, 1979, SOV PHYS SEMICOND+, V13, P1292

[2] ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (12) : 1327 - 1330

[3] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J]. PHYSICAL REVIEW B, 1986, 33 (10): : 7346 - 7348

[4] BARDEEN J, 1947, PHYS REV, V71, P777

[5] BRUDNYI VN, 1985, SOV PHYS SEMICOND+, V19, P460

[6] BRUDNYI VN, 1982, SOV PHYS SEMICOND+, V16, P21

[7] BRUDNYI VN, 1986, SOV PHYS SEMICOND+, V20, P320

[8] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1987, 35 (12): : 6182 - 6194

[9] FAST-NEUTRON BOMBARDMENT OF GASB [J]. PHYSICAL REVIEW, 1955, 100 (06): : 1614 - 1618

[10] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729